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| Preliminary Data Sheet HiPerFET Power MOSFETs TM VDSS ID25 8A 9A RDS(on) 1.1 0.9 trr 250 ns 250 ns IXFH8N80 800V IXFH9N80 800V N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg Md Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Mounting torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C 8N80 9N80 8N80 9N80 8N80 9N80 Maximum Ratings 800 800 20 30 8 9 32 36 8 9 18 5 180 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ V/ns W C C C Features * * * * * * TO-247 SMD* G D (TAB) S G = Gate S = Source D = Drain TAB = Drain *Add suffix letter "S" for surface mountable package 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 800 0.088 2 -0.257 100 TJ = 25C TJ = 125C 8N80 9N80 250 1 1.1 0.9 4.5 V %/K V %/K nA A mA International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier Applications * * * * * * VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDSS temperature coefficient VDS = VGS, ID = 2.5 mA VGS(th) temperature coefficient VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Advantages * * * VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle 2% Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density 96527A (8/97) (c) 1997 IXYS All rights reserved IXFH8N80 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 4 7 2600 VGS = 0 V, VDS = 25 V, f = 1 MHz 240 60 35 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 4.7 (External) 15 70 35 85 130 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 15 40 30 70 0.7 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W IXFH9N80 TO-247 AD (IXFH) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 ID25, pulse test TO-247 SMD Outline Source-Drain Diode Symbol IS I SM VSD trr Q RM I RM IF = IS -di/dt = 100 A/s, VR = 100 V Test Conditions VGS = 0 Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle 2 % TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C 0.5 1.0 7.5 9.0 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 8N80 9N80 8N80 9N80 8 9 32 36 1.5 250 400 A A A A V ns ns C C A A 1. Gate 2. Drain Dim. A A1 A2 b b1 C D E e L L1 L2 L3 L4 OP Q R S 3. Source 4. Drain Millimeter Min. Max. 4.83 2.29 1.91 1.14 1.91 5.21 2.54 2.16 1.40 2.13 0.80 21.34 16.13 BSC 5.10 2.90 2.30 0.10 2.10 3.65 6.20 4.83 BSC Inches Min. Max. .190 .090 .075 .045 .075 .024 .819 .620 .215 .193 .106 .083 .00 .075 .140 .220 .170 .242 .205 .100 .085 .055 .084 .031 .840 .635 BSC .201 .114 .091 .004 .083 .144 .244 .190 BSC 0.61 20.80 15.75 5.45 4.90 2.70 2.10 0.00 1.90 3.55 5.59 4.32 6.15 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXFH8N80 Figure 1. Output Characteristics at 25OC U 2A!$ 8 EA P IXFH9N80 Figure 2. Output Characteristics at 125OC U 2A !$ 8 EA P W BT 2 W %W W BT 2 W %W , $ P SHU HV $W $W , $ P SHU HV ' ' 9 '6 9ROV W 9 '6 9 ROV W Figure 3. RDS(on) normalized to 15A/25OC vs. ID U A2A!$ 8 E P Figure 4. RDS(on) normalized to 15A/25OC vs. TJ W BTA 2A W 1 RU DO HG PL ] W 1 RU DO HG PL ] BT A2A W D 9A 2A#6 1 2 6 ' 5 5 1 2 6 ' ,' $ P SHU HV 7 - ' HJU HHV & Figure 5. Drain Current vs. Case Temperature , $ P SHU HV Figure 6. Admittance Curves A ,;)+1 , $ P SHU HV ,;)+1 U A2A !$ 8 E ' U A2A!$ 8 E ' 7 & ' HJU HHV & 9 *6 9 ROV W (c) 1997 IXYS All rights reserved IXFH8N80 Figure 7. Gate Charge IXFH9N80 Figure 8. Capacitance Curves W 9TA 9A 2A#W 2A#6 2A 6 AAAD y W A A W AAAD BA 6 * A A A r p h v p h h 8 8v sA2A HC 8 8 BhrA8uhtrAA8 W 9T AAWy Figure 9. Forward Voltage Drop of the Intrinsic Diode "! Figure10. Forward Bias Safe Operating Area ' 10 r r U EA r r 6 A A D % 2A !$ P 8 ' # U 2A!$ 8 EA P 6 A A D A ' 1 U A2A!$ & A 2 8 A 98 ! 0 .1 1 10 W 9TA 100 AWy ' W T9 AAAWy Figure 11. Transient Thermal Resistance 92$ 92! 92 X F A A u S 92$ 92! 92 & - TvtyrAQyr QyrAXvquAATrpq IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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